Researchers have gathered new insights and details regarding semiconductor degradation mechanism at the Nagoya Institute of Technology (NITech). This research was also undertaken in collaboration with other universities in Japan.
More Details About the Semiconductor Degradation Mechanism Studies
Semiconductor devices form an important part of electronic devices, and their performance is direly affected by the material’s degradation. Scientists at the Nagoya Institute of Technology have provided details about how such materials degrade. This is being done to shed light on new ways by which a material’s performance may be prevented or slowed down.
The research was published in the Journal of Applied Physics in September 2018. The researchers used Silicon Carbide (SiC) material in this experiment. This material is now gaining extensive popularity in the form of an alternative to other commonly-used semiconductor materials. The research is based on a particular type of SiC material, specifically called 4H-SiC, which is distinctive for its structure. This material was exposed to photoluminescence as well as different temperatures in order to produce particular types of deformations. These deformations are known to further cause degradation of SiC-based devices. Through this experiment, the researchers were able to witness the exact ways by which the deformations took place on an atomic scale.
According to Dr. Masahi Kato, the team quantified the speed at which electric charge particles moved in regions of 4H-SiC material, wherein the atomic structure has been defected. Due to this, numerous ways can now be discovered to suppress degradation of SiC-based devices such as power electronic systems. The scientists used photoluminescence to enable movement of electric charge particles. They examined specific factors that have a possibility of hampering particle movement as well as the material that was used. The experiment also consisted of temperature analysis, mainly to check how it had an effect on the rate of deformation.