Embedded Memory

Embedded Memory

A research team from the Tohoku University led by Professor Tetsuo Endoh has developed advanced spin-transfer torque magnetoresistive random access memory – 128Mb-density STT_MRAM.  The writing speed used in embedded memory application in AI and IOT will reach to 14 ns.  It is the quickest write speed for embedded memory application in the world. This development will help in making mass-production of large volume STT-MRAM with a density above 100Mb.